64-1814-58 SiHG33N60EF-GE3 N-Channel MOSFET, 33 A, 600 V EF Series, 3-Pin TO-247AC Vishay SiHG33N60EF-GE3
Electronic/Electrical Parts and Controll Equipments

64-1814-58 SiHG33N60EF-GE3 N-Channel MOSFET, 33 A, 600 V EF Series, 3-Pin TO-247AC Vishay SiHG33N60EF-GE3

model: 64-1814-58
brand: Vishay

Product Description

Product Model: 64-1814-58Product Brand: Vishay Features […]

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Product Details

Product Model: 64-1814-58
Product Brand: Vishay

Features

  • N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor. Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current Low figure-of-merit (FOM) Low input capacitance (Ciss) Increased robustness due to low Reverse Recovery Charge Ultra low gate charge (Qg)

Spec

  • Quantity:1piece
  • Channel Type:N
  • Maximum Continuous Drain Current:33 A
  • Maximum Drain Source Voltage:600 V
  • Maximum Drain Source Resistance:98 mΩ
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:TO-247AC
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:278 W
  • Transistor Material:Si
  • CODE No.:903-4484

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