Features

• SiGe RF Bipolar Transistors, Infineon. A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon s silicon germanium carbon (SiGe:C) material technology and are especially suited for *** mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when ***d in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.