64-1661-21 IRFB4110GPBF N-Channel MOSFET, 180 A, 100 V HEXFET, 3-Pin TO-220AB Infineon IRFB4110GPBF
Electronic/Electrical Parts and Controll Equipments

64-1661-21 IRFB4110GPBF N-Channel MOSFET, 180 A, 100 V HEXFET, 3-Pin TO-220AB Infineon IRFB4110GPBF

model: 64-1661-21
brand: Infineon

Product Description

Product Model: 64-1661-21Product Brand: Infineon Featur […]

Contact Us

Hotline

18866622123

WeChat

WeChat ID: 18866622123

WeChat QR Code

Product Details

Product Model: 64-1661-21
Product Brand: Infineon

Features

  • N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

  • Quantity:1set(2pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:180 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:4.5 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TO-220AB
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:370 W
  • Typical Turn-On Delay Time:25 ns
  • CODE No.:865-5807

Related product recommendations

You may also be interested in the following products

63-6955-18 RS PRO M12 x 50mm Hex Socket Countersunk Screw Plain Stainless Steel 124-7253
Electronic/Electrical Parts and Controll Equipments
64-1354-94 Vishay 800V 3A, Silicon Junction Diode, 2-Pin DO-201AD RGP30K-E3/54 RGP30K-E3/54
Electronic/Electrical Parts and Controll Equipments