Electronic/Electrical Parts and Controll Equipments
64-1661-21 IRFB4110GPBF N-Channel MOSFET, 180 A, 100 V HEXFET, 3-Pin TO-220AB Infineon IRFB4110GPBF
Product Description
Product Model: 64-1661-21Product Brand: Infineon Featur […]
Contact Us
Product Details
Product Model: 64-1661-21
Product Brand: Infineon
Features
- N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1set(2pieces)
- Channel Type:N
- Maximum Continuous Drain Current:180 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:4.5 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:370 W
- Typical Turn-On Delay Time:25 ns
- CODE No.:865-5807
Related product recommendations
You may also be interested in the following products
63-6955-18 RS PRO M12 x 50mm Hex Socket Countersunk Screw Plain Stainless Steel 124-7253
model: 63-6955-18
brand: RS PRO
64-1354-94 Vishay 800V 3A, Silicon Junction Diode, 2-Pin DO-201AD RGP30K-E3/54 RGP30K-E3/54
model: 64-1354-94
brand: Vishay
63-8058-91 Wurth WE-KI Series Type 1008A Shielded Wire-wound SMD Inductor with a Ceramic Core, 100 nH Wire-Wound 1A Idc Q:60 744762210A
model: 63-8058-91
brand: Wurth Elektronik