64-1363-80 SISS27DN-T1-GE3 P-Channel MOSFET, 23 A, 30 V TrenchFET, 8-Pin PowerPAK 1212 Vishay SISS27DN-T1-GE3
Electronic/Electrical Parts and Controll Equipments

64-1363-80 SISS27DN-T1-GE3 P-Channel MOSFET, 23 A, 30 V TrenchFET, 8-Pin PowerPAK 1212 Vishay SISS27DN-T1-GE3

model: 64-1363-80
brand: Vishay

Product Description

Product Model: 64-1363-80Product Brand: Vishay Features […]

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Product Details

Product Model: 64-1363-80
Product Brand: Vishay

Features

  • P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

Spec

  • Quantity:1bag(20pieces)
  • Channel Type:P
  • Maximum Continuous Drain Current:23 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:9 mΩ
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:PowerPAK 1212
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:57 W
  • Number of Elements per Chip:1
  • CODE No.:814-1323

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