64-1363-77 SISS23DN-T1-GE3 P-Channel MOSFET, 27 A, 20 V TrenchFET, 8-Pin PowerPAK 1212 Vishay SISS23DN-T1-GE3
Electronic/Electrical Parts and Controll Equipments

64-1363-77 SISS23DN-T1-GE3 P-Channel MOSFET, 27 A, 20 V TrenchFET, 8-Pin PowerPAK 1212 Vishay SISS23DN-T1-GE3

model: 64-1363-77
brand: Vishay

Product Description

Product Model: 64-1363-77Product Brand: Vishay Features […]

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Product Details

Product Model: 64-1363-77
Product Brand: Vishay

Features

  • P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

Spec

  • Quantity:1bag(20pieces)
  • Channel Type:P
  • Maximum Continuous Drain Current:27 A
  • Maximum Drain Source Voltage:20 V
  • Maximum Drain Source Resistance:11.5 mΩ
  • Minimum Gate Threshold Voltage:0.4V
  • Maximum Gate Source Voltage:-8 V, +8 V
  • Package Type:PowerPAK 1212
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:57 W
  • Number of Elements per Chip:1
  • CODE No.:814-1314

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