64-1350-26 SI1922EDH-T1-GE3 Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3
Electronic/Electrical Parts and Controll Equipments

64-1350-26 SI1922EDH-T1-GE3 Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3

model: 64-1350-26
brand: Vishay

Product Description

Product Model: 64-1350-26Product Brand: Vishay Features […]

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Product Details

Product Model: 64-1350-26
Product Brand: Vishay

Features

  • Dual N-Channel MOSFET, Vishay Semiconductor

Spec

  • Quantity:1bag(50pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:1.3 A
  • Maximum Drain Source Voltage:20 V
  • Maximum Drain Source Resistance:263 mΩ
  • Minimum Gate Threshold Voltage:0.4V
  • Maximum Gate Source Voltage:-8 V, +8 V
  • Package Type:SOT-363 (SC-88)
  • Mounting Type:Surface Mount
  • Pin Count:6
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:1.25 W
  • Height:1mm
  • CODE No.:812-3091

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