64-1318-35 FDS3890 Dual N-Channel MOSFET, 4.7 A, 80 V PowerTrench, 8-Pin SOIC ON Semiconductor FDS3890
Electronic/Electrical Parts and Controll Equipments

64-1318-35 FDS3890 Dual N-Channel MOSFET, 4.7 A, 80 V PowerTrench, 8-Pin SOIC ON Semiconductor FDS3890

model: 64-1318-35
brand: ON Semiconductor

Product Description

Product Model: 64-1318-35Product Brand: ON Semiconducto […]

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Product Details

Product Model: 64-1318-35
Product Brand: ON Semiconductor

Features

  • PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor. ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:4.7 A
  • Maximum Drain Source Voltage:80 V
  • Maximum Drain Source Resistance:82 mΩ
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOIC
  • Mounting Type:Surface Mount
  • Transistor Configuration:Isolated
  • Channel Mode:Enhancement
  • Maximum Power Dissipation:1.6 W, 2 W
  • Number of Elements per Chip:2
  • CODE No.:806-3630

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