Electronic/Electrical Parts and Controll Equipments
64-1296-69 RFD3055LESM9A N-Channel MOSFET, 11 A, 60 V, 3-Pin DPAK ON Semiconductor RFD3055LESM9A
model:
64-1296-69
brand:
ON Semiconductor
Product Description
Product Model: 64-1296-69Product Brand: ON Semiconducto […]
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Product Details
Product Model: 64-1296-69
Product Brand: ON Semiconductor
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:11 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:107 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-16 V, +16 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:38 W
- Length:6.73mm
- CODE No.:802-2159
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