64-1296-66 RFD16N06LESM9A N-Channel MOSFET, 16 A, 60 V, 3-Pin DPAK ON Semiconductor RFD16N06LESM9A
Electronic/Electrical Parts and Controll Equipments

64-1296-66 RFD16N06LESM9A N-Channel MOSFET, 16 A, 60 V, 3-Pin DPAK ON Semiconductor RFD16N06LESM9A

model: 64-1296-66
brand: ON Semiconductor

Product Description

Product Model: 64-1296-66Product Brand: ON Semiconducto […]

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Product Details

Product Model: 64-1296-66
Product Brand: ON Semiconductor

Features

  • Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Spec

  • Quantity:1set(2500pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:16 A
  • Maximum Drain Source Voltage:60 V
  • Maximum Drain Source Resistance:47 mΩ
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-8 V, +10 V
  • Package Type:DPAK (TO-252)
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:90 W
  • Number of Elements per Chip:1
  • CODE No.:166-3194

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