Electronic/Electrical Parts and Controll Equipments
64-1296-64 RFD12N06RLESM9A N-Channel MOSFET, 18 A, 60 V UltraFET, 3-Pin DPAK ON Semiconductor RFD12N06RLESM9A
model:
64-1296-64
brand:
ON Semiconductor
Product Description
Product Model: 64-1296-64Product Brand: ON Semiconducto […]
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Product Details
Product Model: 64-1296-64
Product Brand: ON Semiconductor
Features
- UltraFET® MOSFET, Fairchild Semiconductor. UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge. Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:18 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:75 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-16 V, +16 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:49 W
- Minimum Operating Temperature:-55 °C
- CODE No.:166-3193
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