Electronic/Electrical Parts and Controll Equipments
63-8352-60 FDV303N N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 ON Semiconductor FDV303N
model:
63-8352-60
brand:
ON Semiconductor
Product Description
Product Model: 63-8352-60Product Brand: ON Semiconducto […]
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Product Details
Product Model: 63-8352-60
Product Brand: ON Semiconductor
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:680 mA
- Maximum Drain Source Voltage:25 V
- Maximum Drain Source Resistance:450 mΩ
- Minimum Gate Threshold Voltage:0.65V
- Maximum Gate Source Voltage:+8 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:350 mW
- Minimum Operating Temperature:-55 °C
- CODE No.:145-5305
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