63-8351-40 STB18N60DM2 N-Channel MOSFET, 12 A, 600 V MDmesh DM2, 3-Pin D2PAK STMicroelectronics STB18N60DM2
Electronic/Electrical Parts and Controll Equipments

63-8351-40 STB18N60DM2 N-Channel MOSFET, 12 A, 600 V MDmesh DM2, 3-Pin D2PAK STMicroelectronics STB18N60DM2

model: 63-8351-40
brand: STMicroelectronics

Product Description

Product Model: 63-8351-40Product Brand: STMicroelectron […]

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Product Details

Product Model: 63-8351-40
Product Brand: STMicroelectronics

Features

  • N-Channel MDmesh DM2 Series, STMicroelectronics. The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies. High dV/dt capability for improved system reliability AEC-Q101 qualified

Spec

  • Quantity:1set(1000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:12 A
  • Maximum Drain Source Voltage:600 V
  • Maximum Drain Source Resistance:290 mΩ
  • Maximum Gate Threshold Voltage:5V
  • Minimum Gate Threshold Voltage:3V
  • Maximum Gate Source Voltage:-25 V, +25 V
  • Package Type:D2PAK (TO-263)
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:90 W
  • Dimensions:9.35 x 10.4 x 4.6mm
  • CODE No.:166-0942

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