63-8306-62 IXFN102N30P N-Channel MOSFET, 86 A, 300 V HiperFET, Polar, 4-Pin SOT-227B IXYS IXFN102N30P
Electronic/Electrical Parts and Controll Equipments

63-8306-62 IXFN102N30P N-Channel MOSFET, 86 A, 300 V HiperFET, Polar, 4-Pin SOT-227B IXYS IXFN102N30P

model: 63-8306-62
brand: IXYS

Product Description

Product Model: 63-8306-62Product Brand: IXYS Features N […]

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Product Details

Product Model: 63-8306-62
Product Brand: IXYS

Features

  • N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

Spec

  • Quantity:1set(10pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:86 A
  • Maximum Drain Source Voltage:300 V
  • Maximum Drain Source Resistance:33 mΩ
  • Maximum Gate Threshold Voltage:5V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOT-227B
  • Mounting Type:Panel Mount
  • Pin Count:4
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:570 W
  • Transistor Material:Si
  • CODE No.:168-4467

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