Electronic/Electrical Parts and Controll Equipments
63-8220-58 SQS966ENW-T1_GE3 Dual N-Channel MOSFET, 6 A, 60 V TrenchFET, 8-Pin 1212 Vishay Siliconix SQS966ENW-T1_GE3
model:
63-8220-58
brand:
Vishay Siliconix
Product Description
Product Model: 63-8220-58Product Brand: Vishay Siliconi […]
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Product Details
Product Model: 63-8220-58
Product Brand: Vishay Siliconix
Spec
- Quantity:1bag(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:6 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:60 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:±20 V
- Package Type:1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:27.8 W
- Maximum Operating Temperature:+175 °C
- CODE No.:178-3851
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