63-8220-57 SQS966ENW-T1_GE3 Dual N-Channel MOSFET, 6 A, 60 V TrenchFET, 8-Pin 1212 Vishay Siliconix SQS966ENW-T1_GE3
Electronic/Electrical Parts and Controll Equipments

63-8220-57 SQS966ENW-T1_GE3 Dual N-Channel MOSFET, 6 A, 60 V TrenchFET, 8-Pin 1212 Vishay Siliconix SQS966ENW-T1_GE3

model: 63-8220-57
brand: Vishay Siliconix

Product Description

Product Model: 63-8220-57Product Brand: Vishay Siliconi […]

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Product Details

Product Model: 63-8220-57
Product Brand: Vishay Siliconix

Spec

  • Quantity:1set(3000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:6 A
  • Maximum Drain Source Voltage:60 V
  • Maximum Drain Source Resistance:60 mΩ
  • Maximum Gate Threshold Voltage:2.5V
  • Minimum Gate Threshold Voltage:1.5V
  • Maximum Gate Source Voltage:±20 V
  • Package Type:1212
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:27.8 W
  • Maximum Operating Temperature:+175 °C
  • CODE No.:178-3727

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