63-8220-55 SiSS12DN-T1-GE3 N-Channel MOSFET, 60 A, 40 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSS12DN-T1-GE3
Electronic/Electrical Parts and Controll Equipments

63-8220-55 SiSS12DN-T1-GE3 N-Channel MOSFET, 60 A, 40 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSS12DN-T1-GE3

model: 63-8220-55
brand: Vishay Siliconix

Product Description

Product Model: 63-8220-55Product Brand: Vishay Siliconi […]

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Product Details

Product Model: 63-8220-55
Product Brand: Vishay Siliconix

Spec

  • Quantity:1set(3000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:60 A
  • Maximum Drain Source Voltage:40 V
  • Maximum Drain Source Resistance:2 mΩ
  • Maximum Gate Threshold Voltage:1.1V
  • Minimum Gate Threshold Voltage:2.4V
  • Maximum Gate Source Voltage:-16 V, +20 V
  • Package Type:1212
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:65.7 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:178-3701

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