63-8090-99 SIRA06DP-T1-GE3 N-Channel MOSFET, 40 A, 30 V TrenchFET, 8-Pin PowerPAK SO Vishay SIRA06DP-T1-GE3
Electronic/Electrical Parts and Controll Equipments

63-8090-99 SIRA06DP-T1-GE3 N-Channel MOSFET, 40 A, 30 V TrenchFET, 8-Pin PowerPAK SO Vishay SIRA06DP-T1-GE3

model: 63-8090-99
brand: Vishay

Product Description

Product Model: 63-8090-99Product Brand: Vishay Features […]

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Product Details

Product Model: 63-8090-99
Product Brand: Vishay

Features

  • N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

Spec

  • Quantity:1set(3000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:40 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:3.5 mΩ
  • Minimum Gate Threshold Voltage:1.1V
  • Maximum Gate Source Voltage:-16 V, +20 V
  • Package Type:PowerPAK SO
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Maximum Power Dissipation:62.5 W
  • Transistor Material:Si
  • CODE No.:165-7074

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