63-8007-41 FDS8958B Dual N/P-Channel MOSFET, 4.5 A, 6.4 A, 30 V PowerTrench, 8-Pin SOIC ON Semiconductor FDS8958B
Electronic/Electrical Parts and Controll Equipments

63-8007-41 FDS8958B Dual N/P-Channel MOSFET, 4.5 A, 6.4 A, 30 V PowerTrench, 8-Pin SOIC ON Semiconductor FDS8958B

model: 63-8007-41
brand: ON Semiconductor

Product Description

Product Model: 63-8007-41Product Brand: ON Semiconducto […]

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Product Details

Product Model: 63-8007-41
Product Brand: ON Semiconductor

Features

  • PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Spec

  • Quantity:1set(2500pieces)
  • Channel Type:N, P
  • Maximum Continuous Drain Current:4.5 A, 6.4 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:39 mΩ, 80 mΩ
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-25 V, -20 V, +20 V, +25 V
  • Package Type:SOIC
  • Mounting Type:Surface Mount
  • Transistor Configuration:Isolated
  • Channel Mode:Enhancement
  • Maximum Power Dissipation:1.6 W, 2 W
  • Series:PowerTrench
  • CODE No.:166-3211

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