63-7037-12 Infineon 1200V 31.9A, SiC Schottky Diode, 2+Tab-Pin TO-220 IDH10G120C5XKSA1 IDH10G120C5XKSA1
Electronic/Electrical Parts and Controll Equipments

63-7037-12 Infineon 1200V 31.9A, SiC Schottky Diode, 2+Tab-Pin TO-220 IDH10G120C5XKSA1 IDH10G120C5XKSA1

model: 63-7037-12
brand: Infineon

Product Description

Product Model: 63-7037-12Product Brand: Infineon Featur […]

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Product Details

Product Model: 63-7037-12
Product Brand: Infineon

Features

  • thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
  • Infineon thinQ! The fifth generation ***s new thin wafer technology in SiC Schottky barrier diodes to improve thermal properties. SiC Schottky diode devices have features for high-voltage power semiconductors, such as high breakdown field strength and thermal conductivity for higher efficiency levels. This latest generation is suitable for communications SMPS, high-*** servers, UPS systems, motor drives, solar inverters, PC silver boxes, lighting applications and more.
  • Reducing EMI

Spec

  • Quantity:1set(500pieces)
  • Maximum Continuous Forward Current : 31.9A
  • Number of Elements per Chip : 1
  • Peak Reverse Repetitive Voltage : 1200V
  • Mounting Type : Through Hole
  • Package Type : TO-220
  • Diode Technology : SiC Schottky
  • Pin Count : 2+Tab
  • Maximum Forward Voltage Drop : 2.6V
  • Peak Non-Repetitive Forward Surge Current : 99A
  • CODE No.:133-8556

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