63-7020-33 IRFH5210TRPBF N-Channel MOSFET, 10 A, 100 V HEXFET, 8-Pin PQFN Infineon IRFH5210TRPBF
Electronic/Electrical Parts and Controll Equipments

63-7020-33 IRFH5210TRPBF N-Channel MOSFET, 10 A, 100 V HEXFET, 8-Pin PQFN Infineon IRFH5210TRPBF

model: 63-7020-33
brand: Infineon

Product Description

Product Model: 63-7020-33Product Brand: Infineon Featur […]

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Product Details

Product Model: 63-7020-33
Product Brand: Infineon

Features

  • N-Channel Power MOSFET 100 V, Infineon
  • Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 10 A
  • Maximum Drain Source Voltage : 100 V
  • Maximum Drain Source Resistance : 14.9 mΩ
  • Maximum Gate Threshold Voltage : 4V
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : PQFN
  • Mounting Type : Surface Mount
  • Pin Count : 8
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 104 W
  • Typical Gate Charge @ Vgs : 40 nC @ 10 V
  • CODE No.:130-0977

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