63-7020-27 IRF9362TRPBF Dual P-Channel MOSFET, 8 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF9362TRPBF
Electronic/Electrical Parts and Controll Equipments

63-7020-27 IRF9362TRPBF Dual P-Channel MOSFET, 8 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF9362TRPBF

model: 63-7020-27
brand: Infineon

Product Description

Product Model: 63-7020-27Product Brand: Infineon Featur […]

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Product Details

Product Model: 63-7020-27
Product Brand: Infineon

Features

  • Dual P Channel Power MOSFET, Infineon
  • The Infineon dual power MOSFET integrates two HEXFETR devices to provide a space-saving, cost-effective switching solution for high component density designs where substrate space is paramount. Various packaging options are available, allowing designers to choose a dual P-channel configuration.

Spec

  • Quantity:1bag(25pieces)
  • Channel Type : P
  • Maximum Continuous Drain Current : 8 A
  • Maximum Drain Source Voltage : 30 V
  • Maximum Drain Source Resistance : 32 mΩ
  • Maximum Gate Threshold Voltage : 2.4V
  • Minimum Gate Threshold Voltage : 1.3V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOIC
  • Mounting Type : Surface Mount
  • Pin Count : 8
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 2 W
  • Number of Elements per Chip : 2
  • CODE No.:130-0970

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