Electronic/Electrical Parts and Controll Equipments
63-7020-23 IRF8010STRLPBF N-Channel MOSFET, 80 A, 100 V HEXFET, 3-Pin D2PAK Infineon IRF8010STRLPBF
Product Description
Product Model: 63-7020-23Product Brand: Infineon Featur […]
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Product Details
Product Model: 63-7020-23
Product Brand: Infineon
Features
- N-Channel Power MOSFET 100 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 80 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 15 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 260 W
- Typical Turn-On Delay Time : 15 ns
- CODE No.:130-0966
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