63-7020-21 IRF7907TRPBF Dual N-Channel MOSFET, 9.1 A, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7907TRPBF
Electronic/Electrical Parts and Controll Equipments

63-7020-21 IRF7907TRPBF Dual N-Channel MOSFET, 9.1 A, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7907TRPBF

model: 63-7020-21
brand: Infineon

Product Description

Product Model: 63-7020-21Product Brand: Infineon Featur […]

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Product Details

Product Model: 63-7020-21
Product Brand: Infineon

Features

  • Dual N-Channel Power MOSFETs Infineon
  • Infineon dual power MOSFETs integrate two HEXFETR devices to provide a space-saving and cost-effective switching solution for high component density designs where substrate space is paramount. Various packaging options allow designers to choose a dual N-channel configuration.

Spec

  • Quantity:1bag(10pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 9.1 A, 11 A
  • Maximum Drain Source Voltage : 30 V
  • Maximum Drain Source Resistance : 13.7 mΩ, 20.5 mΩ
  • Maximum Gate Threshold Voltage : 2.35V
  • Minimum Gate Threshold Voltage : 1.35V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOIC
  • Mounting Type : Surface Mount
  • Pin Count : 8
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 2 W
  • Series : HEXFET
  • CODE No.:130-0964

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