Electronic/Electrical Parts and Controll Equipments
63-6990-75 IXFN360N15T2 N-Channel MOSFET, 310 A, 150 V GigaMOS TrenchT2 HiperFET, 4-Pin SOT-227 IXYS IXFN360N15T2
Product Description
Product Model: 63-6990-75Product Brand: IXYS Features N […]
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Product Details
Product Model: 63-6990-75
Product Brand: IXYS
Features
- N-Channel Power MOSFET, IXYS HiperFET GigaMOS Series
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 310 A
- Maximum Drain Source Voltage : 150 V
- Maximum Drain Source Resistance : 4 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 2.5V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-227
- Mounting Type : Surface Mount
- Pin Count : 4
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.07 kW
- Number of Elements per Chip : 1
- CODE No.:125-8042
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