63-6990-75 IXFN360N15T2 N-Channel MOSFET, 310 A, 150 V GigaMOS TrenchT2 HiperFET, 4-Pin SOT-227 IXYS IXFN360N15T2
Electronic/Electrical Parts and Controll Equipments

63-6990-75 IXFN360N15T2 N-Channel MOSFET, 310 A, 150 V GigaMOS TrenchT2 HiperFET, 4-Pin SOT-227 IXYS IXFN360N15T2

model: 63-6990-75
brand: IXYS

Product Description

Product Model: 63-6990-75Product Brand: IXYS Features N […]

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Product Details

Product Model: 63-6990-75
Product Brand: IXYS

Features

  • N-Channel Power MOSFET, IXYS HiperFET GigaMOS Series

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 310 A
  • Maximum Drain Source Voltage : 150 V
  • Maximum Drain Source Resistance : 4 mΩ
  • Maximum Gate Threshold Voltage : 5V
  • Minimum Gate Threshold Voltage : 2.5V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOT-227
  • Mounting Type : Surface Mount
  • Pin Count : 4
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 1.07 kW
  • Number of Elements per Chip : 1
  • CODE No.:125-8042

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