63-5180-55 IXFN80N50P N-Channel MOSFET, 66 A, 500 V HiperFET, Polar, 4-Pin SOT-227B IXYS IXFN80N50P
Electronic/Electrical Parts and Controll Equipments

63-5180-55 IXFN80N50P N-Channel MOSFET, 66 A, 500 V HiperFET, Polar, 4-Pin SOT-227B IXYS IXFN80N50P

model: 63-5180-55
brand: IXYS

Product Description

Product Model: 63-5180-55Product Brand: IXYS Features N […]

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Product Details

Product Model: 63-5180-55
Product Brand: IXYS

Features

  • N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

Spec

  • Quantity:1set(10pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 66 A
  • Maximum Drain Source Voltage : 500 V
  • Maximum Drain Source Resistance : 65 mΩ
  • Maximum Gate Threshold Voltage : 5V
  • Maximum Gate Source Voltage : -30 V, +30 V
  • Package Type : SOT-227B
  • Mounting Type : Panel Mount
  • Pin Count : 4
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 700 W
  • Number of Elements per Chip : 1
  • CODE No.:920-0745

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