63-5171-63 C2M0160120D SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0160120D
Electronic/Electrical Parts and Controll Equipments

63-5171-63 C2M0160120D SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0160120D

model: 63-5171-63
brand: Wolfspeed

Product Description

Product Model: 63-5171-63Product Brand: Wolfspeed Featu […]

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Product Details

Product Model: 63-5171-63
Product Brand: Wolfspeed

Features

  • Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 19 A
  • Maximum Drain Source Voltage : 1200 V
  • Maximum Drain Source Resistance : 196 mΩ
  • Maximum Gate Threshold Voltage : 2.5V
  • Minimum Gate Threshold Voltage : 2.4V
  • Maximum Gate Source Voltage : -5 V, +20 V
  • Package Type : TO-247
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 125 W
  • Typical Turn-On Delay Time : 9 ns
  • CODE No.:904-7348

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