63-5163-81 IPP032N06N3GXKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin TO-220 Infineon IPP032N06N3GXKSA1
Electronic/Electrical Parts and Controll Equipments

63-5163-81 IPP032N06N3GXKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin TO-220 Infineon IPP032N06N3GXKSA1

model: 63-5163-81
brand: Infineon

Product Description

Product Model: 63-5163-81Product Brand: Infineon Featur […]

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Product Details

Product Model: 63-5163-81
Product Brand: Infineon

Features

  • Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

Spec

  • Quantity:1bag(5pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 120 A
  • Maximum Drain Source Voltage : 60 V
  • Maximum Drain Source Resistance : 3.2 mΩ
  • Maximum Gate Threshold Voltage : 4V
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : TO-220
  • Mounting Type : Through Hole
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 188 W
  • Number of Elements per Chip : 1
  • CODE No.:892-2100

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