63-5123-05 FDD7N25LZTM N-Channel MOSFET, 6.2 A, 250 V UniFET, 3-Pin DPAK ON Semiconductor FDD7N25LZTM
Electronic/Electrical Parts and Controll Equipments

63-5123-05 FDD7N25LZTM N-Channel MOSFET, 6.2 A, 250 V UniFET, 3-Pin DPAK ON Semiconductor FDD7N25LZTM

model: 63-5123-05
brand: ON Semiconductor

Product Description

Product Model: 63-5123-05Product Brand: ON Semiconducto […]

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Product Details

Product Model: 63-5123-05
Product Brand: ON Semiconductor

Features

  • UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXt***ed) and electronic lamp ballasts.

Spec

  • Quantity:1set(10pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 6.2 A
  • Maximum Drain Source Voltage : 250 V
  • Maximum Drain Source Resistance : 570 mΩ
  • Minimum Gate Threshold Voltage : 3V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : DPAK (TO-252)
  • Mounting Type : Surface Mount
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Maximum Power Dissipation : 56 W
  • Number of Elements per Chip : 1
  • CODE No.:809-0931

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