63-5116-32 IXFB210N30P3 N-Channel MOSFET, 210 A, 300 V HiperFET, Polar3, 3-Pin PLUS264 IXYS IXFB210N30P3
Electronic/Electrical Parts and Controll Equipments

63-5116-32 IXFB210N30P3 N-Channel MOSFET, 210 A, 300 V HiperFET, Polar3, 3-Pin PLUS264 IXYS IXFB210N30P3

model: 63-5116-32
brand: IXYS

Product Description

Product Model: 63-5116-32Product Brand: IXYS Features N […]

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Product Details

Product Model: 63-5116-32
Product Brand: IXYS

Features

  • N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series. A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 210 A
  • Maximum Drain Source Voltage : 300 V
  • Maximum Drain Source Resistance : 14.5 mΩ
  • Maximum Gate Threshold Voltage : 5V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : PLUS264
  • Mounting Type : Through Hole
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 1.89 kW
  • Number of Elements per Chip : 1
  • CODE No.:802-4357

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