63-5059-30 IPB036N12N3GATMA1 N-Channel MOSFET, 180 A, 120 V OptiMOS 3, 7-Pin D2PAK Infineon IPB036N12N3GATMA1
Electronic/Electrical Parts and Controll Equipments

63-5059-30 IPB036N12N3GATMA1 N-Channel MOSFET, 180 A, 120 V OptiMOS 3, 7-Pin D2PAK Infineon IPB036N12N3GATMA1

model: 63-5059-30
brand: Infineon

Product Description

Product Model: 63-5059-30Product Brand: Infineon Featur […]

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Product Details

Product Model: 63-5059-30
Product Brand: Infineon

Features

  • Infineon OptiMOS™3 Power MOSFETs, 100V and over

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 180 A
  • Maximum Drain Source Voltage : 120 V
  • Maximum Drain Source Resistance : 3.6 mΩ
  • Maximum Gate Threshold Voltage : 4V
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : D2PAK (TO-263)
  • Mounting Type : Surface Mount
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Maximum Power Dissipation : 300 W
  • Number of Elements per Chip : 1
  • CODE No.:754-5428

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