63-5058-23 SPB80P06PGATMA1 P-Channel MOSFET, 80 A, 60 V SIPMOS, 3-Pin D2PAK Infineon SPB80P06PGATMA1
Electronic/Electrical Parts and Controll Equipments

63-5058-23 SPB80P06PGATMA1 P-Channel MOSFET, 80 A, 60 V SIPMOS, 3-Pin D2PAK Infineon SPB80P06PGATMA1

model: 63-5058-23
brand: Infineon

Product Description

Product Model: 63-5058-23Product Brand: Infineon Featur […]

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Product Details

Product Model: 63-5058-23
Product Brand: Infineon

Features

  • Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be ***d in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant

Spec

  • Quantity:1piece
  • Channel Type : P
  • Maximum Continuous Drain Current : 80 A
  • Maximum Drain Source Voltage : 60 V
  • Maximum Drain Source Resistance : 23 mΩ
  • Maximum Gate Threshold Voltage : 4V
  • Minimum Gate Threshold Voltage : 2.1V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : D2PAK (TO-263)
  • Mounting Type : Surface Mount
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 340 W
  • Typical Turn-On Delay Time : 24 ns
  • CODE No.:753-3166

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