63-4866-59 IRF5305PBF P-Channel MOSFET, 31 A, 55 V HEXFET, 3-Pin TO-220AB Infineon IRF5305PBF
Electronic/Electrical Parts and Controll Equipments

63-4866-59 IRF5305PBF P-Channel MOSFET, 31 A, 55 V HEXFET, 3-Pin TO-220AB Infineon IRF5305PBF

model: 63-4866-59
brand: Infineon

Product Description

Product Model: 63-4866-59Product Brand: Infineon Featur […]

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Product Details

Product Model: 63-4866-59
Product Brand: Infineon

Features

  • P-Channel Power MOSFET 40V to 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

  • Quantity:1piece
  • Channel Type : P
  • Maximum Continuous Drain Current : 31 A
  • Maximum Drain Source Voltage : 55 V
  • Maximum Drain Source Resistance : 60 mΩ
  • Maximum Gate Threshold Voltage : 4V
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : TO-220AB
  • Mounting Type : Through Hole
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 110 W
  • Maximum Operating Temperature : +175 °C
  • CODE No.:541-1736

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