63-4866-30 IRFBE30PBF N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF
Electronic/Electrical Parts and Controll Equipments

63-4866-30 IRFBE30PBF N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

model: 63-4866-30
brand: Vishay

Product Description

Product Model: 63-4866-30Product Brand: Vishay Features […]

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Product Details

Product Model: 63-4866-30
Product Brand: Vishay

Features

  • N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 4.1 A
  • Maximum Drain Source Voltage : 800 V
  • Maximum Drain Source Resistance : 3 Ω
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : TO-220AB
  • Mounting Type : Through Hole
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 125 W
  • Number of Elements per Chip : 1
  • CODE No.:541-1124

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