63-4771-18 BSP149H6327XTSA1 N-Channel MOSFET, 660 mA, 200 V Depletion SIPMOS, 3 + Tab-Pin SOT-223 Infineon BSP149H6327XTSA1
Electronic/Electrical Parts and Controll Equipments

63-4771-18 BSP149H6327XTSA1 N-Channel MOSFET, 660 mA, 200 V Depletion SIPMOS, 3 + Tab-Pin SOT-223 Infineon BSP149H6327XTSA1

model: 63-4771-18
brand: Infineon

Product Description

Product Model: 63-4771-18Product Brand: Infineon Featur […]

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Product Details

Product Model: 63-4771-18
Product Brand: Infineon

Features

  • Infineon SIPMOS® N-Channel MOSFETs

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 660 mA
  • Maximum Drain Source Voltage : 200 V
  • Maximum Drain Source Resistance : 1.8 Ω
  • Maximum Gate Threshold Voltage : 1V
  • Minimum Gate Threshold Voltage : 2.1V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOT-223
  • Mounting Type : Surface Mount
  • Transistor Configuration : Single
  • Channel Mode : Depletion
  • Category : Small Signal
  • Maximum Power Dissipation : 1.8 W
  • Typical Turn-On Delay Time : 5.1 ns
  • CODE No.:354-5720

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