Electronic/Electrical Parts and Controll Equipments
63-4771-18 BSP149H6327XTSA1 N-Channel MOSFET, 660 mA, 200 V Depletion SIPMOS, 3 + Tab-Pin SOT-223 Infineon BSP149H6327XTSA1
Product Description
Product Model: 63-4771-18Product Brand: Infineon Featur […]
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Product Details
Product Model: 63-4771-18
Product Brand: Infineon
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity：1piece
- Channel Type : N
- Maximum Continuous Drain Current : 660 mA
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 1.8 Ω
- Maximum Gate Threshold Voltage : 1V
- Minimum Gate Threshold Voltage : 2.1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-223
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Depletion
- Category : Small Signal
- Maximum Power Dissipation : 1.8 W
- Typical Turn-On Delay Time : 5.1 ns
- CODE No.:354-5720
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