Electronic/Electrical Parts and Controll Equipments
64-1363-80 SISS27DN-T1-GE3 P-Channel MOSFET, 23 A, 30 V TrenchFET, 8-Pin PowerPAK 1212 Vishay SISS27DN-T1-GE3
Product Description
Product Model: 64-1363-80Product Brand: Vishay Features […]
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Product Details
Product Model: 64-1363-80
Product Brand: Vishay
Features
- P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
Spec
- Quantity:1bag(20pieces)
- Channel Type:P
- Maximum Continuous Drain Current:23 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:9 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowerPAK 1212
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:57 W
- Number of Elements per Chip:1
- CODE No.:814-1323
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