63-8400-08 IRL6372TRPBF Dual N-Channel MOSFET, 8.1 A, 30 V HEXFET, 8-Pin SOIC Infineon IRL6372TRPBF
Electronic/Electrical Parts and Controll Equipments

63-8400-08 IRL6372TRPBF Dual N-Channel MOSFET, 8.1 A, 30 V HEXFET, 8-Pin SOIC Infineon IRL6372TRPBF

model: 63-8400-08
brand: Infineon

Product Description

Product Model: 63-8400-08Product Brand: Infineon Featur […]

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Product Details

Product Model: 63-8400-08
Product Brand: Infineon

Features

  • Dual N-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.

Spec

  • Quantity:1set(4000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:8.1 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:23 mΩ
  • Maximum Gate Threshold Voltage:1.1V
  • Minimum Gate Threshold Voltage:0.5V
  • Maximum Gate Source Voltage:-12 V, +12 V
  • Package Type:SOIC
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:2 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:168-6026

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