63-8395-61 IXFN360N15T2 N-Channel MOSFET, 310 A, 150 V GigaMOS TrenchT2 HiperFET, 4-Pin SOT-227 IXYS IXFN360N15T2
Electronic/Electrical Parts and Controll Equipments

63-8395-61 IXFN360N15T2 N-Channel MOSFET, 310 A, 150 V GigaMOS TrenchT2 HiperFET, 4-Pin SOT-227 IXYS IXFN360N15T2

model: 63-8395-61
brand: IXYS

Product Description

Product Model: 63-8395-61Product Brand: IXYS Features N […]

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Product Details

Product Model: 63-8395-61
Product Brand: IXYS

Features

  • N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

Spec

  • Quantity:1set(10pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:310 A
  • Maximum Drain Source Voltage:150 V
  • Maximum Drain Source Resistance:4 mΩ
  • Maximum Gate Threshold Voltage:5V
  • Minimum Gate Threshold Voltage:2.5V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOT-227
  • Mounting Type:Surface Mount
  • Pin Count:4
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:1.07 kW
  • Minimum Operating Temperature:-55 °C
  • CODE No.:168-4578

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