63-8395-59 IXFN200N10P N-Channel MOSFET, 200 A, 100 V Polar HiPerFET, 4-Pin SOT-227B IXYS IXFN200N10P
Electronic/Electrical Parts and Controll Equipments

63-8395-59 IXFN200N10P N-Channel MOSFET, 200 A, 100 V Polar HiPerFET, 4-Pin SOT-227B IXYS IXFN200N10P

model: 63-8395-59
brand: IXYS

Product Description

Product Model: 63-8395-59Product Brand: IXYS Features N […]

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Product Details

Product Model: 63-8395-59
Product Brand: IXYS

Features

  • N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

Spec

  • Quantity:1set(10pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:200 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:7.5 mΩ
  • Maximum Gate Threshold Voltage:5V
  • Minimum Gate Threshold Voltage:3V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOT-227B
  • Mounting Type:Surface Mount
  • Pin Count:4
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:680 W
  • Typical Turn-On Delay Time:30 ns
  • CODE No.:168-4576

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