Electronic/Electrical Parts and Controll Equipments
63-8110-40 SIHB30N60E-GE3 N-Channel MOSFET, 29 A, 600 V E Series, 3-Pin D2PAK Vishay SIHB30N60E-GE3
Product Description
Product Model: 63-8110-40Product Brand: Vishay Features […]
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Product Details
Product Model: 63-8110-40
Product Brand: Vishay
Features
- N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor. The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features. Low figure-of-merit (FOM) RDS(on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS(on)) Ultra-low gate charge (Qg) Fast switching Reduced switching and conduction losses
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:29 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:125 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:250 W
- Transistor Material:Si
- CODE No.:768-9310
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