Electronic/Electrical Parts and Controll Equipments
63-7020-65 IRL6372TRPBF Dual N-Channel MOSFET, 8.1 A, 30 V HEXFET, 8-Pin SOIC Infineon IRL6372TRPBF
Product Description
Product Model: 63-7020-65Product Brand: Infineon Featur […]
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Product Details
Product Model: 63-7020-65
Product Brand: Infineon
Features
- Dual N-Channel Power MOSFETs Infineon
- Infineon dual power MOSFETs integrate two HEXFETR devices to provide a space-saving and cost-effective switching solution for high component density designs where substrate space is paramount. Various packaging options allow designers to choose a dual N-channel configuration.
Spec
- Quantity:1bag(25pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 8.1 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 23 mΩ
- Maximum Gate Threshold Voltage : 1.1V
- Minimum Gate Threshold Voltage : 0.5V
- Maximum Gate Source Voltage : -12 V, +12 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-1013
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