63-7020-23 IRF8010STRLPBF N-Channel MOSFET, 80 A, 100 V HEXFET, 3-Pin D2PAK Infineon IRF8010STRLPBF
Electronic/Electrical Parts and Controll Equipments

63-7020-23 IRF8010STRLPBF N-Channel MOSFET, 80 A, 100 V HEXFET, 3-Pin D2PAK Infineon IRF8010STRLPBF

model: 63-7020-23
brand: Infineon

Product Description

Product Model: 63-7020-23Product Brand: Infineon Featur […]

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Product Details

Product Model: 63-7020-23
Product Brand: Infineon

Features

  • N-Channel Power MOSFET 100 V, Infineon
  • Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 80 A
  • Maximum Drain Source Voltage : 100 V
  • Maximum Drain Source Resistance : 15 mΩ
  • Maximum Gate Threshold Voltage : 4V
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : D2PAK (TO-263)
  • Mounting Type : Surface Mount
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 260 W
  • Typical Turn-On Delay Time : 15 ns
  • CODE No.:130-0966

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