63-5130-31 SI4909DY-T1-GE3 Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3
Electronic/Electrical Parts and Controll Equipments

63-5130-31 SI4909DY-T1-GE3 Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3

model: 63-5130-31
brand: Vishay

Product Description

Product Model: 63-5130-31Product Brand: Vishay Features […]

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Product Details

Product Model: 63-5130-31
Product Brand: Vishay

Features

  • Dual P-Channel MOSFET, Vishay Semiconductor

Spec

  • Quantity:1bag(20pieces)
  • Channel Type : P
  • Maximum Continuous Drain Current : 6.5 A
  • Maximum Drain Source Voltage : 40 V
  • Maximum Drain Source Resistance : 34 mΩ
  • Minimum Gate Threshold Voltage : 1.2V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOIC
  • Mounting Type : Surface Mount
  • Pin Count : 8
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 3.2 W
  • Width : 4mm
  • CODE No.:818-1302

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