63-5123-38 C2M0080120D SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0080120D
Electronic/Electrical Parts and Controll Equipments

63-5123-38 C2M0080120D SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0080120D

model: 63-5123-38
brand: Wolfspeed

Product Description

Product Model: 63-5123-38Product Brand: Wolfspeed Featu […]

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Product Details

Product Model: 63-5123-38
Product Brand: Wolfspeed

Features

  • Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 31 A
  • Maximum Drain Source Voltage : 1200 V
  • Maximum Drain Source Resistance : 208 mΩ
  • Maximum Gate Threshold Voltage : 3.2V
  • Minimum Gate Threshold Voltage : 1.7V
  • Maximum Gate Source Voltage : -10 V, +25 V
  • Package Type : TO-247
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 208 W
  • Number of Elements per Chip : 1
  • CODE No.:809-8991

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