63-5069-52 FDB28N30TM N-Channel MOSFET, 28 A, 300 V UniFET, 3-Pin D2PAK ON Semiconductor FDB28N30TM
Electronic/Electrical Parts and Controll Equipments

63-5069-52 FDB28N30TM N-Channel MOSFET, 28 A, 300 V UniFET, 3-Pin D2PAK ON Semiconductor FDB28N30TM

model: 63-5069-52
brand: ON Semiconductor

Product Description

Product Model: 63-5069-52Product Brand: ON Semiconducto […]

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Product Details

Product Model: 63-5069-52
Product Brand: ON Semiconductor

Features

  • UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXt***ed) and electronic lamp ballasts.

Spec

  • Quantity:1bag(2pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 28 A
  • Maximum Drain Source Voltage : 300 V
  • Maximum Drain Source Resistance : 129 mΩ
  • Minimum Gate Threshold Voltage : 3V
  • Maximum Gate Source Voltage : -30 V, +30 V
  • Package Type : D2PAK (TO-263)
  • Mounting Type : Surface Mount
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 250 W
  • Dimensions : 10.67 x 11.33 x 4.83mm
  • CODE No.:759-8970

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