63-4996-95 SI2308BDS-T1-GE3 N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 Vishay SI2308BDS-T1-GE3
Electronic/Electrical Parts and Controll Equipments

63-4996-95 SI2308BDS-T1-GE3 N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 Vishay SI2308BDS-T1-GE3

model: 63-4996-95
brand: Vishay

Product Description

Product Model: 63-4996-95Product Brand: Vishay Features […]

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Product Details

Product Model: 63-4996-95
Product Brand: Vishay

Features

  • N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

Spec

  • Quantity:1bag(20pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 1.9 A
  • Maximum Drain Source Voltage : 60 V
  • Maximum Drain Source Resistance : 156 mΩ
  • Minimum Gate Threshold Voltage : 1V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOT-23 (TO-236)
  • Mounting Type : Surface Mount
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 1.09 W
  • Dimensions : 3.04 x 1.4 x 1.02mm
  • CODE No.:710-3257

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