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                                                            63-4936-23 FQD12N20LTM N-Channel MOSFET, 9 A, 200 V QFET, 3-Pin DPAK ON Semiconductor FQD12N20LTM
                                    model:
                                    63-4936-23
                                
                                                                                                
                                    brand:
                                    ON Semiconductor
                                
                                                                                                
                                                            Product Description
Product Model: 63-4936-23Product Brand: ON Semiconducto […]
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Product Details
Product Model: 63-4936-23
Product Brand: ON Semiconductor
   Features
  
- QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs *** advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
   Spec
  
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 9 A
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 280 mΩ
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2.5 W
- Typical Turn-Off Delay Time : 60 ns
- CODE No.:671-0942
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