Electronic/Electrical Parts and Controll Equipments
63-4868-80 IRF630NPBF N-Channel MOSFET, 9.3 A, 200 V HEXFET, 3-Pin TO-220AB Infineon IRF630NPBF
Product Description
Product Model: 63-4868-80Product Brand: Infineon Featur […]
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Product Details
Product Model: 63-4868-80
Product Brand: Infineon
Features
- N-Channel Power MOSFET 150V to 600V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity：1piece
- Channel Type : N
- Maximum Continuous Drain Current : 9.3 A
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 300 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-220AB
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 82 W
- Typical Turn-Off Delay Time : 27 ns
- CODE No.:543-0068
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