63-4682-13 IXFN200N10P N-Channel MOSFET, 200 A, 100 V Polar HiPerFET, 4-Pin SOT-227B IXYS IXFN200N10P
Electronic/Electrical Parts and Controll Equipments

63-4682-13 IXFN200N10P N-Channel MOSFET, 200 A, 100 V Polar HiPerFET, 4-Pin SOT-227B IXYS IXFN200N10P

model: 63-4682-13
brand: IXYS

Product Description

Product Model: 63-4682-13Product Brand: IXYS Features N […]

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Product Details

Product Model: 63-4682-13
Product Brand: IXYS

Features

  • N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 200 A
  • Maximum Drain Source Voltage : 100 V
  • Maximum Drain Source Resistance : 7.5 mΩ
  • Maximum Gate Threshold Voltage : 5V
  • Minimum Gate Threshold Voltage : 3V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOT-227B
  • Mounting Type : Surface Mount
  • Pin Count : 4
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 680 W
  • Maximum Operating Temperature : +175 °C
  • CODE No.:125-8040

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